GP3D024A065U

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SemiQ

DIODE ARR SIC 650V 12A TO247-3

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SemiQ

DIODE ARR SIC 650V 12A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D024A065U

Current - Average Rectified (Io) (per Diode)	12 A
Current - Reverse Leakage @ Vr	30 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

DIODE ARR SIC 650V 12A TO247-3

Part	Package / Case	Speed	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Reverse Recovery Time (trr)
SemiQ GP3D024A065U	TO-247-3	No Recovery Time	1 Pair Common Cathode	650 V	Through Hole	SiC (Silicon Carbide) Schottky	30 µA	12 A	175 ░C	-55 C	1.5 V	TO-247-3	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 5.66

General part information

Diode Array 1 Pair Common Cathode 650 V 12A Through Hole TO-247-3

Technical documentation and resources