SF3008PT

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 30A TO247AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF3008PT

Capacitance @ Vr, F	175 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Current - Average Rectified (Io)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr
Taiwan Semiconductor Corporation SF3008PT	30 A	200 mA 500 ns	600 V	35 ns	175 pF	150 °C	-55 °C	Standard	TO-247-3	TO-247AD (TO-3P)	Through Hole	1.7 V	10 µA

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General part information

Diode 600 V 30A Through Hole TO-247AD (TO-3P)

Technical documentation and resources