TW030Z120C,S1F
ActiveToshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247-4L 3
TW030Z120C,S1F
ActiveToshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247-4L 3
Description
General part information
TW030Z120C,S1F
N-Channel 1200 V 60A (Tc) 249W (Tc) Through Hole TO-247-4L(X)
Technical Specifications
Parameters and characteristics for this part
| Specification | TW030Z120C,S1F |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 82 nC |
| Input Capacitance (Ciss) (Max) | 2925 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4L(X) |
| Power Dissipation (Max) | 249 W |
| Rds On (Max) | 41 mOhm |
| Technology | SiC (Silicon Carbide Junction Transistor), SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources