Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TIP35C | TIP35 Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) [Max] | 25 A | 25 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 hFE | 10 hFE |
| Frequency - Transition | 3 MHz | 3 MHz |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-247-3 | TO-247-3 |
| Supplier Device Package | TO-247-3 | TO-247-3 |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic | 4 V | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TIP35 Series
Complementary power transistors
| Part | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce | Transistor Type | Supplier Device Package | Operating Temperature | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Package / Case | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics TIP35C | |||||||||||
STMicroelectronics TIP35C | 3 MHz | 10 hFE | NPN | TO-247-3 | 150 °C | Through Hole | 100 V | 1 mA | TO-247-3 | 25 A | 4 V |
STMicroelectronics TIP35C |
Description
General part information
TIP35 Series
The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications.
Documents
Technical documentation and resources