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DMN2300UFL4-7 - Package Image for X2-DFN1310-6

DMN2300UFL4-7

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET,

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DMN2300UFL4-7 - Package Image for X2-DFN1310-6

DMN2300UFL4-7

Active
Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET,

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2300UFL4-7
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C2.11 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs3.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds128.6 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-XFDFN Exposed Pad
Power - Max [Max]1.39 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs195 mOhm
Supplier Device PackageX2-DFN1310-6 (Type B)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.49
10$ 0.38
100$ 0.23
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.13
6000$ 0.13
9000$ 0.11
30000$ 0.11
75000$ 0.11

Description

General part information

DMN2300UFL4 Series

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.