MBRF20200CT-Y

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 200V ITO220AB

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 200V ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MBRF20200CT-Y

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	850 mV

Part	Package / Case	Diode Configuration	Technology	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Grade	Voltage - Forward (Vf) (Max) @ If [Max]
Taiwan Semiconductor Corporation MBRF20200CTH	TO-220-3 Full Pack Isolated Tab	1 Pair Common Cathode	Schottky	AEC-Q101	200 V	100 µA	ITO-220AB	1.05 V	Through Hole	200 mA 500 ns	150 °C	-55 °C	20 A	Automotive
Taiwan Semiconductor Corporation MBRF20200CT-Y	TO-220-3 Full Pack Isolated Tab	1 Pair Common Cathode	Schottky		200 V	100 µA	ITO-220AB		Through Hole	200 mA 500 ns	150 °C	-55 °C	20 A		850 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 200 V 20A Through Hole TO-220-3 Full Pack, Isolated Tab

Technical documentation and resources