DMC1028UFDB-13

Active

Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMC1028UFDB-13

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A, 6 A
Drain to Source Voltage (Vdss)	20 V, 12 V
Gate Charge (Qg) (Max) @ Vgs	18.5 nC
Input Capacitance (Ciss) (Max) @ Vds	787 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	1.36 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	U-DFN2020-6 (Type B)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Complementary Pair Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package
Diodes Inc DMC1028UFDB-7	787 pF	18.5 nC	Surface Mount	12 V 20 V	N and P-Channel	1.36 W	3.4 A 6 A	1 V	25 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
Diodes Inc DMC1028UFDB-13	787 pF	18.5 nC	Surface Mount	12 V 20 V	N and P-Channel	1.36 W	3.4 A 6 A	1 V	25 mOhm	MOSFET (Metal Oxide)	-55 °C	150 °C	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Complementary Pair Enhancement Mode MOSFET

Technical documentation and resources