Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN2524N8-G | TN2524 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 360 mA |
| Drain to Source Voltage (Vdss) | - | 240 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5 - 10 V |
| FET Type | - | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 125 pF |
| Mounting Type | - | Surface Mount |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-243AA |
| Power Dissipation (Max) | - | 1.6 W |
| Rds On (Max) @ Id, Vgs | - | 6 Ohm |
| Supplier Device Package | - | TO-243AA (SOT-89) |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.54 | |
| 25 | $ 1.28 | |||
| 100 | $ 1.15 | |||
| Digi-Reel® | 1 | $ 1.54 | ||
| 25 | $ 1.28 | |||
| 100 | $ 1.15 | |||
| Tape & Reel (TR) | 2000 | $ 1.15 | ||
| Microchip Direct | T/R | 1 | $ 1.54 | |
| 25 | $ 1.28 | |||
| 100 | $ 1.15 | |||
| 1000 | $ 0.98 | |||
| 5000 | $ 0.89 | |||
| 10000 | $ 0.81 | |||
TN2524 Series
MOSFET, N-Channel Enhancement-Mode, 240V, 6.0 Ohm
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN2524N8-G | |||||||||||||||
Microchip Technology TN2524N8-G | 2 V | 4.5 V, 10 V | TO-243AA | Surface Mount | MOSFET (Metal Oxide) | 125 pF | 20 V | 1.6 W | -55 °C | 150 °C | TO-243AA (SOT-89) | 240 V | 360 mA | N-Channel | 6 Ohm |
Description
General part information
TN2524 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources