IRFS4321TRRPBF

Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 15 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 15 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS4321TRRPBF

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	350 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRFS4321TRRPBF	15 mOhm	85 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	D2PAK	MOSFET (Metal Oxide)	-55 °C	175 ░C	4460 pF	N-Channel	110 nC	20 V	5 V	350 W	150 V	10 V
Infineon Technologies IRFS4321TRLPBF	15 mOhm	85 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	D2PAK	MOSFET (Metal Oxide)	-55 °C	175 ░C	4460 pF	N-Channel	110 nC	30 V	5 V	350 W	150 V	10 V
Infineon Technologies IRFS4321TRL7PP	14.7 mOhm	86 A	D2PAK TO-263-7	Surface Mount	D2PAK-7	MOSFET (Metal Oxide)	-55 °C	175 ░C	4460 pF	N-Channel	110 nC	30 V	5 V	350 W	150 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 85A (Tc) 350W (Tc) Surface Mount D2PAK

Technical documentation and resources