DMN2009UFDF-7
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2009UFDF-7
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN2009UFDF-7
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2009UFDF-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12.8 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.5 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 1083 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Package Name | U-DFN2020-6 (Type F) |
| Power Dissipation (Max) | 1.3 W |
| Rds On (Max) | 9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.4 V |
Pricing
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CAD
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