IRFB4115PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 104 A, 0.0093 OHM, TO-220AB, THROUGH HOLE

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IRFB4115PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 104 A, 0.0093 OHM, TO-220AB, THROUGH HOLE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFB4115PBF

Current - Continuous Drain (Id) @ 25°C	104 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	5270 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	380 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

IRFB4115 Series

Part	Technology	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRFB4115PBF	MOSFET (Metal Oxide)	380 W	TO-220-3	104 A	5 V	11 mOhm	N-Channel	TO-220AB	10 V	120 nC	Through Hole	20 V	150 V	5270 pF	-55 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.44
		10	$ 2.28
		100	$ 1.76
Newark	Each	1	$ 3.38
		1	$ 3.38
		10	$ 2.27
		10	$ 2.27
		100	$ 1.93
		100	$ 1.93
		500	$ 1.76
		500	$ 1.76
		1000	$ 1.58
		1000	$ 1.58
		3000	$ 1.39
		3000	$ 1.39
		5000	$ 1.22
		5000	$ 1.22

Description

General part information

IRFB4115 Series

The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

Documents

Technical documentation and resources