MMBT2222ALT3G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 600 MA, 225 MW, SOT-23, SURFACE MOUNT
MMBT2222ALT3G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 600 MA, 225 MW, SOT-23, SURFACE MOUNT
Description
General part information
MMBT2222ALT3G
Collector - Emitter Breakdown Voltage 40 V
Pb-Free Packages are Available
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Technical Specifications
Parameters and characteristics for this part
| Specification | MMBT2222ALT3G |
|---|---|
| Current - Collector (Ic) (Max) | 0.6 mA |
| Current - Collector Cutoff (Max) | 0.01 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 300 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 (TO-236) |
| Power - Max | 300 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
Pricing
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CAD
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