STU13N65M2

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STMicroelectronics

MOSFET N-CH 650V 10A IPAK

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STMicroelectronics

MOSFET N-CH 650V 10A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU13N65M2

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	590 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	430 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 650V 10A IPAK

Part	Operating Temperature	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Technology	Vgs(th) (Max) @ Id
STMicroelectronics STU13N65M2	150 °C	IPAK, TO-251-3 Short Leads, TO-251AA	430 mOhm	17 nC	10 V	10 A	TO-251 (IPAK)	590 pF	110 W	Through Hole	650 V	25 V	N-Channel	MOSFET (Metal Oxide)	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 10A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources