FDT86102LZ
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 6.6 A, 0.028 OHM, SOT-223, SURFACE MOUNT
FDT86102LZ
ActiveON Semiconductor
POWER MOSFET, N CHANNEL, 100 V, 6.6 A, 0.028 OHM, SOT-223, SURFACE MOUNT
Description
General part information
FDT86102LZ
This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDT86102LZ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 6.6 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 25 nC |
| Input Capacitance (Ciss) (Max) | 1490 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223-4 |
| Power Dissipation (Max) | 2.2 W |
| Rds On (Max) | 28 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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