FGH30S150P
ObsoleteIGBT, 1500 V, 30 A SHORTED-ANODE
FGH30S150P
ObsoleteIGBT, 1500 V, 30 A SHORTED-ANODE
Description
General part information
FGH30S150P
Using advanced field stop trench and shorted-anode technology, ON Semiconductor’s shorted-anode trench IGBTs offer superior conductionand switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
Technical Specifications
Parameters and characteristics for this part
| Specification | FGH30S150P |
|---|---|
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 369 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 500 VA |
| Switching Energy (Off) | 900 µJ |
| Switching Energy (On) | 1.16 mJ |
| Td (off) @ 25°C | 492 ns |
| Td (on) @ 25°C | 32 ns |
| Test Condition Current | 30 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 600 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 1500 V |
Pricing
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CAD
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