IRFZ46NLPBF
Infineon Technologies
IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 16.5 MOHM;
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IRFZ46NLPBF
Infineon Technologies
IR MOSFET™ N-CHANNEL ; I2PAK TO-262 PACKAGE; 16.5 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFZ46NLPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 53 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 3.8 W, 107 W |
| Rds On (Max) @ Id, Vgs | 16.5 mOhm |
| Supplier Device Package | TO-262 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 0.65 | |
Description
General part information
IRFZ46 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.