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FMB3904

FMB3904

Active
ON Semiconductor

BIPOLAR (BJT) ARRAY TRANSISTOR, NPN, 40 V, 700 MW, 200 MA, 40, SOT-23 ROHS COMPLIANT: YES

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FMB3904

FMB3904

Active
ON Semiconductor

BIPOLAR (BJT) ARRAY TRANSISTOR, NPN, 40 V, 700 MW, 200 MA, 40, SOT-23 ROHS COMPLIANT: YES

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Description

General part information

FMB3904

Dual NPN 40 V, 200 mA General Purpose Bipolar Junction Transistor. This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

Technical Specifications

Parameters and characteristics for this part

SpecificationFMB3904
Current - Collector (Ic) (Max)0.2 mA
DC Current Gain (hFE) (Min)100
Frequency - Transition250 MHz
Mounting TypeSurface Mount
NPN Count2
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Package NameSuperSOT™-6
Power - Max700 mW
Transistor ConfigurationDual
Transistor TypeNPN
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

3D models and CAD resources for this part