MMBD352WT1G
ActiveON Semiconductor
RF SCHOTTKY DIODE, BARRIER, SERIES, 7 V, 10 MA, 600 MV, 0.9 PF, SOT-323
MMBD352WT1G
ActiveON Semiconductor
RF SCHOTTKY DIODE, BARRIER, SERIES, 7 V, 10 MA, 600 MV, 0.9 PF, SOT-323
Description
General part information
MMBD352WT1G
The Schottky Diode is designed primarily for UHF mixer applications but is suitable also for use in detector and ultra fast switching circuits.
Technical Specifications
Parameters and characteristics for this part
| Specification | MMBD352WT1G |
|---|---|
| Capacitance | 1 pF |
| Diode Pair Configuration | Series Connection |
| Diode Pair Count | 1 |
| Diode Type | Schottky |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | SC-70-3 (SOT323) |
| Power Dissipation (Max) | 200 mW |
| Voltage - Peak Reverse (Max) | 7 V |
Pricing
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CAD
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Documents
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