FDP18N20F
ObsoletePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, FRFET<SUP>®</SUP>, 200 V, 18 A, 140 MΩ, TO-220
FDP18N20F
ObsoletePOWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, FRFET<SUP>®</SUP>, 200 V, 18 A, 140 MΩ, TO-220
Description
General part information
FDP18N20F
UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET®MOSFET has been enhanced by lifetime control. Its trris less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDP18N20F |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 18 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 26 nC |
| Input Capacitance (Ciss) (Max) | 1180 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power Dissipation (Max) | 100 W |
| Rds On (Max) | 145 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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