SF3006PT

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 30A TO247AD

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	SF3006PT

Capacitance @ Vr, F	175 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Package / Case	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Capacitance @ Vr, F	Qualification	Grade
Taiwan Semiconductor Corporation SF3006PT	400 V	Standard	35 ns	150 °C	-55 °C	Through Hole	TO-247-3	200 mA 500 ns	TO-247AD (TO-3P)	10 µA	30 A	175 pF
Taiwan Semiconductor Corporation SF3006PTH	400 V	Standard	35 ns	150 °C	-55 °C	Through Hole	TO-247-3	200 mA 500 ns	TO-247AD (TO-3P)	10 µA	30 A	175 pF	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 30A Through Hole TO-247AD (TO-3P)

Technical documentation and resources