MJD210G
ActiveON Semiconductor
5.0 A, 25 V PNP BIPOLAR POWER TRANSISTOR
MJD210G
ActiveON Semiconductor
5.0 A, 25 V PNP BIPOLAR POWER TRANSISTOR
Description
General part information
MJD210G
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD210G |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 45 |
| Frequency - Transition | 65 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 1.4 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Pricing
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CAD
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Documents
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