MBR1100RL
Obsolete1.0 A, 100 V, SCHOTTKY BARRIER RECTIFIER
MBR1100RL
Obsolete1.0 A, 100 V, SCHOTTKY BARRIER RECTIFIER
Description
General part information
MBR1100RL
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Technical Specifications
Parameters and characteristics for this part
| Specification | MBR1100RL |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 500 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | Axial, DO-204AL, DO-41 |
| Package Name | Axial |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) | 790 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources