US2M-HF

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Comchip Technology

DIODE GEN PURP 1KV 2A DO214AC

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Comchip Technology

DIODE GEN PURP 1KV 2A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	US2M-HF

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.65 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DIODE GEN PURP 1KV 2A DO214AC

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Technology	Speed
Comchip Technology US2M-HF	5 µA	2 A	DO-214AC, SMA	1000 V	150 °C	-55 °C	DO-214AC (SMA)	75 ns	1.65 V	Surface Mount	Standard	200 mA, 500 ns

General part information

Diode 1000 V 2A Surface Mount DO-214AC (SMA)

Technical documentation and resources

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