DS1250W-100+
ActiveAnalog Devices Inc./Maxim Integrated
IC NVSRAM 4MBIT PARALLEL 32EDIP
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DS1250W-100+
ActiveAnalog Devices Inc./Maxim Integrated
IC NVSRAM 4MBIT PARALLEL 32EDIP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | DS1250W-100+ | DS1250W Series |
|---|---|---|
| Access Time | 100 ns | 100 - 150 ns |
| Memory Format | NVSRAM | NVSRAM |
| Memory Interface | Parallel | Parallel |
| Memory Organization | 512 K | 512 K |
| Memory Size | 512 kb | 512 kb |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature [Max] | 70 °C | 70 - 85 °C |
| Operating Temperature [Min] | 0 °C | -40 - 0 °C |
| Package / Case | 0.6 in | 0.6 in |
| Package / Case | 15.24 mm | 15.24 mm |
| Package / Case | 32-DIP Module | 32-DIP Module, 34-PowerCap™ Module |
| Supplier Device Package | 32-EDIP | 32-EDIP, 34-PowerCap Module |
| Technology | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Voltage - Supply [Max] | 3.6 V | 3.6 V |
| Voltage - Supply [Min] | 3 V | 3 V |
| Write Cycle Time - Word, Page | - | 150 ns |
| Write Cycle Time - Word, Page [custom] | 100 ns | 100 ns |
| Write Cycle Time - Word, Page [custom] | 100 ns | 100 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
DS1250W Series
IC NVSRAM 4MBIT PARALLEL 32EDIP
| Part | Memory Format | Memory Size | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Access Time | Memory Type | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Package / Case | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Supplier Device Package | Mounting Type | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1250W-100IND | NVSRAM | 512 kb | 3.6 V | 3 V | 512 K | 100 ns | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 85 °C | -40 °C | 0.6 in | 15.24 mm | 32-DIP Module | 100 ns | 100 ns | 32-EDIP | Through Hole | Parallel | |
Analog Devices Inc./Maxim Integrated DS1250W-150+ | NVSRAM | 512 kb | 3.6 V | 3 V | 512 K | 150 ns | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 70 °C | 0 °C | 0.6 in | 15.24 mm | 32-DIP Module | 32-EDIP | Through Hole | Parallel | 150 ns | ||
Analog Devices Inc./Maxim Integrated DS1250W-100+ | NVSRAM | 512 kb | 3.6 V | 3 V | 512 K | 100 ns | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 70 °C | 0 °C | 0.6 in | 15.24 mm | 32-DIP Module | 100 ns | 100 ns | 32-EDIP | Through Hole | Parallel | |
Analog Devices Inc./Maxim Integrated DS1250WP-100+ | NVSRAM | 512 kb | 3.6 V | 3 V | 512 K | 100 ns | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 70 °C | 0 °C | 34-PowerCap™ Module | 100 ns | 100 ns | 34-PowerCap Module | Surface Mount | Parallel | |||
Analog Devices Inc./Maxim Integrated DS1250WP-100IND+ | NVSRAM | 512 kb | 3.6 V | 3 V | 512 K | 100 ns | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 85 °C | -40 °C | 34-PowerCap™ Module | 100 ns | 100 ns | 34-PowerCap Module | Surface Mount | Parallel | |||
Analog Devices Inc./Maxim Integrated DS1250W-100IND+ | NVSRAM | 512 kb | 3.6 V | 3 V | 512 K | 100 ns | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 85 °C | -40 °C | 0.6 in | 15.24 mm | 32-DIP Module | 100 ns | 100 ns | 32-EDIP | Through Hole | Parallel | |
Analog Devices Inc./Maxim Integrated DS1250WP-150 | NVSRAM | 512 kb | 3.6 V | 3 V | 512 K | 150 ns | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 70 °C | 0 °C | 34-PowerCap™ Module | 34-PowerCap Module | Surface Mount | Parallel | 150 ns |
Description
General part information
DS1250W Series
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 100 ns 32-EDIP
Documents
Technical documentation and resources