Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | BU508AF | BU508AF Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) [Max] | 8 A | 8 A |
| Current - Collector Cutoff (Max) [Max] | 200 µA | 200 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 | 10 |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-3P-3 Full Pack | TO-3P-3 Full Pack |
| Power - Max [Max] | 50 W | 50 W |
| Supplier Device Package | TO-3PF | TO-3PF |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 700 V | 700 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
BU508AF Series
High voltage NPN power transistor for standard definition CRT display
| Part | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | Package / Case | Vce Saturation (Max) @ Ib, Ic | Voltage - Collector Emitter Breakdown (Max) [Max] | Operating Temperature | Transistor Type | Mounting Type | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BU508AF | 50 W | 8 A | TO-3P-3 Full Pack | 1 V | 700 V | 150 °C | NPN | Through Hole | 200 µA | 10 | TO-3PF |
STMicroelectronics BU508AF | |||||||||||
STMicroelectronics BU508AF |
Description
General part information
BU508AF Series
The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.
Documents
Technical documentation and resources