DMN2041UVT-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2041UVT-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2041UVT-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 5.8 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 689 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TSOT-23-6, SOT-23-6 Thin |
| Power - Max [Max] | 1.1 W |
| Rds On (Max) @ Id, Vgs | 28 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.11 | |
| 30000 | $ 0.10 | |||
| 50000 | $ 0.10 | |||
Description
General part information
DMN2041UFDB Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources