FDMC4435BZ-F127
UnknownP-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET -30V, -18A, 20MΩ
FDMC4435BZ-F127
UnknownP-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET -30V, -18A, 20MΩ
Description
General part information
FDMC4435BZ-F127
This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC4435BZ-F127 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 8.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 53 nC |
| Input Capacitance (Ciss) (Max) | 2045 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.2 mm |
| Package Name | 8-WDFN |
| Package Width | 3.2 mm |
| Power Dissipation (Max) | 2.3 W, 31 W |
| Rds On (Max) | 20 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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