FQU1N60TU
ObsoleteON Semiconductor
MOSFET N-CH 600V 1A IPAK
FQU1N60TU
ObsoleteON Semiconductor
MOSFET N-CH 600V 1A IPAK
Description
General part information
FQU1N60TU
N-Channel 600 V 1A (Tc) 2.5W (Ta), 30W (Tc) Through Hole IPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | FQU1N60TU |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 1 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 6 nC |
| Input Capacitance (Ciss) (Max) | 150 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | IPAK |
| Power Dissipation (Max) | 2.5 W, 30 W |
| Rds On (Max) | 11.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 5 V |
Pricing
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CAD
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Documents
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