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DMP4015SSS-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for SO-8

DMP4015SSS-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

General part information

DMP4015SSS-13

This new generation 40V P channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to battery Load switching.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP4015SSS-13
Current - Continuous Drain (Id) (Ta)9.1 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)47.5 nC, 47.5 nC
Input Capacitance (Ciss) (Max)4234 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SO, 8-SOIC
Package Width3.9 mm
Power Dissipation (Max)1.45 W
Rds On (Max)11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

3D models and CAD resources for this part