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IRF8010PBF - TO-220AB PKG

IRF8010PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 80 A, 0.015 OHM, TO-220AB, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsDatasheetIR Part Numbering System+3
IRF8010PBF - TO-220AB PKG

IRF8010PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 80 A, 0.015 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheetIR Part Numbering System+3

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF8010PBF
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]120 nC
Input Capacitance (Ciss) (Max) @ Vds3830 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)260 W
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.84
10$ 1.84
100$ 1.27
500$ 1.03
1000$ 0.95
2000$ 0.88
5000$ 0.88
NewarkEach 1$ 2.08
10$ 1.45
100$ 1.30
500$ 1.07
1000$ 1.00
3000$ 0.92

Description

General part information

IRF8010 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.