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BSS123Q-7 - SOT-23-3

BSS123Q-7

Active
Diodes Inc

TRANS MOSFET N-CH 100V 0.17A 3-PIN SOT-23 T/R

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DocumentsDatasheetPackage PDF+2
BSS123Q-7 - SOT-23-3

BSS123Q-7

Active
Diodes Inc

TRANS MOSFET N-CH 100V 0.17A 3-PIN SOT-23 T/R

Deep-Dive with AI

DocumentsDatasheetPackage PDF+2

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS123Q-7
Current - Continuous Drain (Id) @ 25°C170 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds60 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]300 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.22
10$ 0.14
100$ 0.08
500$ 0.06
1000$ 0.05
Digi-Reel® 1$ 0.22
10$ 0.14
100$ 0.08
500$ 0.06
1000$ 0.05
Tape & Reel (TR) 3000$ 0.04
6000$ 0.04
9000$ 0.04
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.03
150000$ 0.03
300000$ 0.02

Description

General part information

BSS123Q Series

These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low-voltage, low-current applications such as: small servo motor controls, power MOSFET gate drivers, and switching applications.