IRFP064NPBF
ActivePOWER MOSFET, GENERAL PURPOSE, N CHANNEL, 55 V, 110 A, 0.008 OHM, TO-247AC, THROUGH HOLE
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IRFP064NPBF
ActivePOWER MOSFET, GENERAL PURPOSE, N CHANNEL, 55 V, 110 A, 0.008 OHM, TO-247AC, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFP064NPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 200 W |
| Rds On (Max) @ Id, Vgs [Max] | 8 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IRFP064 Series
| Part | Package / Case | Supplier Device Package | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id | Mounting Type | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-247-3 | TO-247AC | 200 W | 4000 pF | 55 V | 20 V | 4 V | Through Hole | MOSFET (Metal Oxide) | 110 A | -55 °C | 175 ░C | N-Channel | 10 V | 170 nC | 8 mOhm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.74 | |
| 10 | $ 2.45 | |||
| 100 | $ 1.72 | |||
| 500 | $ 1.41 | |||
| 1000 | $ 1.31 | |||
| 2000 | $ 1.28 | |||
Description
General part information
IRFP064 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Documents
Technical documentation and resources