
DMG1013TQ-7
ActiveDiodes Inc
TRANSISTOR: P-MOSFET; UNIPOLAR; -20V; -330MA; IDM: -6A; 270MW
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DMG1013TQ-7
ActiveDiodes Inc
TRANSISTOR: P-MOSFET; UNIPOLAR; -20V; -330MA; IDM: -6A; 270MW
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | DMG1013TQ-7 |
|---|---|
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.58 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 59.76 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-523 |
| Power Dissipation (Max) [Max] | 270 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 700 mOhm |
| Supplier Device Package | SOT-523 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 6 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMG1013UWQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
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Technical documentation and resources