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DMG1013TQ-7 - SOT-523

DMG1013TQ-7

Active
Diodes Inc

TRANSISTOR: P-MOSFET; UNIPOLAR; -20V; -330MA; IDM: -6A; 270MW

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DMG1013TQ-7 - SOT-523

DMG1013TQ-7

Active
Diodes Inc

TRANSISTOR: P-MOSFET; UNIPOLAR; -20V; -330MA; IDM: -6A; 270MW

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationDMG1013TQ-7
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs0.58 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds59.76 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-523
Power Dissipation (Max) [Max]270 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]700 mOhm
Supplier Device PackageSOT-523
TechnologyMOSFET (Metal Oxide)
Vgs (Max)6 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.37
10$ 0.26
100$ 0.12
500$ 0.10
1000$ 0.07
Digi-Reel® 1$ 0.29
10$ 0.18
100$ 0.11
500$ 0.08
1000$ 0.07
Tape & Reel (TR) 3000$ 0.06
6000$ 0.06
9000$ 0.05
30000$ 0.05
75000$ 0.04
150000$ 0.04
TMEN/A 1$ 0.32
10$ 0.21
50$ 0.15
100$ 0.13
500$ 0.09

Description

General part information

DMG1013UWQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Documents

Technical documentation and resources