1N1199A
ActiveGeneSiC Semiconductor
DIODE GEN PURP 50V 12A DO4
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
1N1199A
ActiveGeneSiC Semiconductor
DIODE GEN PURP 50V 12A DO4
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N1199A |
|---|---|
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction [Max] | 200 C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Stud, DO-203AA, DO-4 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-4 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 65.51 | |
| 1500 | $ 3.53 | |||
Description
General part information
1N1199A
Diode 50 V 12A Chassis, Stud Mount DO-4
Documents
Technical documentation and resources