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FQA19N20L

FQA19N20L

Obsolete
ON Semiconductor

MOSFET N-CH 200V 25A TO3P

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FQA19N20L

FQA19N20L

Obsolete
ON Semiconductor

MOSFET N-CH 200V 25A TO3P

Find alt

Description

General part information

FQA19N20L

N-Channel 200 V 25A (Tc) 190W (Tc) Through Hole TO-3P

Technical Specifications

Parameters and characteristics for this part

SpecificationFQA19N20L
Current - Continuous Drain (Id) (Tc)25 A, 25 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On)5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)35 nC, 35 nC
Input Capacitance (Ciss) (Max)2200 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-3P-3, SC-65-3
Package NameTO-3P
Power Dissipation (Max)190 W
Rds On (Max)140 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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