
FQA19N20L
ObsoleteON Semiconductor
MOSFET N-CH 200V 25A TO3P

FQA19N20L
ObsoleteON Semiconductor
MOSFET N-CH 200V 25A TO3P
Description
General part information
FQA19N20L
N-Channel 200 V 25A (Tc) 190W (Tc) Through Hole TO-3P
Technical Specifications
Parameters and characteristics for this part
| Specification | FQA19N20L |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 25 A, 25 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On) | 5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 35 nC, 35 nC |
| Input Capacitance (Ciss) (Max) | 2200 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3P |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) | 140 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
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