NDB6020P
ObsoleteP-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -20V, -24A, 50MΩ
NDB6020P
ObsoleteP-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR -20V, -24A, 50MΩ
Description
General part information
NDB6020P
These logic level P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Technical Specifications
Parameters and characteristics for this part
| Specification | NDB6020P |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 24 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 35 nC, 35 nC |
| Input Capacitance (Ciss) (Max) | 1590 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 (D2PAK) |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 50 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1 V |
Pricing
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