MJE2955TG
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 10 A, 75 W, TO-220, THROUGH HOLE
MJE2955TG
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, PNP, 60 V, 10 A, 75 W, TO-220, THROUGH HOLE
Description
General part information
MJE2955TG
The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJE2955TG |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 700 µA |
| DC Current Gain (hFE) (Min) | 20 |
| Frequency - Transition | 2 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power - Max | 75 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 8 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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CAD
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Documents
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