IRFI4019HG-117P

Obsolete

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO220-5

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Obsolete

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO220-5

Technical Specifications

Parameters and characteristics for this part

Specification	IRFI4019HG-117P

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8.7 A
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	810 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-5 Full Pack, Formed Leads
Power - Max [Max]	18 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	TO-220-5 Full-Pak
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4.9 V

Part	Rds On (Max) @ Id, Vgs	Power - Max	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Configuration	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]
Infineon Technologies IRFI4019H-117PXKMA1	95 mOhm	18 W	4.9 V	8.7 A	TO-220-5 Full Pack Formed Leads	2 N-Channel (Dual)	MOSFET (Metal Oxide)	150 V	-55 °C	150 °C	810 pF	TO-220-5 Full-Pak	Through Hole	20 nC
Infineon Technologies IRFI4019HG-117P	95 mOhm		4.9 V	8.7 A	TO-220-5 Full Pack Formed Leads	2 N-Channel (Dual)	MOSFET (Metal Oxide)	150 V	-55 °C	150 °C	810 pF	TO-220-5 Full-Pak	Through Hole	20 nC	18 W
Infineon Technologies IRFI4019H-117P	95 mOhm		4.9 V	8.7 A	TO-220-5 Full Pack	2 N-Channel (Dual)	MOSFET (Metal Oxide)	150 V	-55 °C	150 °C	810 pF	TO-220-5 Full-Pak	Through Hole	20 nC	18 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 150V 8.7A 18W Through Hole TO-220-5 Full-Pak

Technical documentation and resources