
1N5400T-G
ActiveComchip Technology
DIODE GEN PURP 50V 3A DO27
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1N5400T-G
ActiveComchip Technology
DIODE GEN PURP 50V 3A DO27
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
Specification | 1N5400T-G |
---|---|
Current - Average Rectified (Io) | 3 A |
Current - Reverse Leakage @ Vr | 5 µA |
Mounting Type | Through Hole |
Operating Temperature - Junction [Max] | 125 °C |
Operating Temperature - Junction [Min] | -65 C |
Package / Case | DO-201AD, Axial |
Speed | Standard Recovery >500ns |
Speed | 200 mA |
Supplier Device Package | DO-27 (DO-201AD) |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Tape & Reel (TR) | 1200 | $ 0.12 | |
2400 | $ 0.11 | |||
6000 | $ 0.11 | |||
12000 | $ 0.10 | |||
30000 | $ 0.09 | |||
60000 | $ 0.09 |
1N5400 Series
DIODE GEN PURP 50V 3A DO27
Part | Supplier Device Package | Technology | Mounting Type | Package / Case | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) |
---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 1N5400T-G | DO-27 (DO-201AD) | Standard | Through Hole | DO-201AD, Axial | 5 µA | 125 °C | -65 C | Standard Recovery >500ns | 200 mA | 50 V | 1 V | 3 A |
Description
General part information
1N5400 Series
Diode 50 V 3A Through Hole DO-27 (DO-201AD)
Documents
Technical documentation and resources
No documents available