DMC6070LND-13
ActiveDiodes Inc
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC6070LND-13
ActiveDiodes Inc
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMC6070LND-13 |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4 A, 3.1 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 11.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 731 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max [Max] | 1.4 W |
| Rds On (Max) @ Id, Vgs | 85 mOhm |
| Supplier Device Package | PowerDI3333-8 (Type UXB) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.30 | |
| 6000 | $ 0.28 | |||
| 9000 | $ 0.27 | |||
| 15000 | $ 0.26 | |||
Description
General part information
DMC6070LFDH Series
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources