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FDMS7676

FDMS7676

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 5.5MΩ

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FDMS7676

FDMS7676

Obsolete
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 5.5MΩ

Find alt

Description

General part information

FDMS7676

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS7676
Current - Continuous Drain (Id) (Ta)16 A
Current - Continuous Drain (Id) (Tc)28 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)44 nC, 44 nC
Input Capacitance (Ciss) (Max)2960 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package Length5 mm
Package Name8-PQFN
Package Width6 mm
Power Dissipation (Max)48 W, 2.5 W
Rds On (Max)5.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources