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MJE270

MJE270

Obsolete
ON Semiconductor

2.0 A, 100 V NPN DARLINGTON BIPOLAR JUNCTION POWER TRANSISTOR

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MJE270

MJE270

Obsolete
ON Semiconductor

2.0 A, 100 V NPN DARLINGTON BIPOLAR JUNCTION POWER TRANSISTOR

Find alt

Description

General part information

MJE270

This 2.0 A, 100 V NPN Darlington Bipolar Junction Power Transistor. The MJE270 (NPN) and MJE271 (PNP) are complementary devices.

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE270
Current - Collector (Ic) (Max)2 A
Current - Collector Cutoff (Max)1 mA
DC Current Gain (hFE) (Min)1500
Frequency - Transition6 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-225AA, TO-126-3
Package NameTO-126
Power - Max1.5 W
Transistor TypeNPN, Darlington
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources