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KSC2383YTA

KSC2383YTA

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 160 V, 1 A, 900 MW, TO-92L, THROUGH HOLE

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KSC2383YTA

KSC2383YTA

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 160 V, 1 A, 900 MW, TO-92L, THROUGH HOLE

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Description

General part information

KSC2383YTA

Bipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3

Technical Specifications

Parameters and characteristics for this part

SpecificationKSC2383YTA
Current - Collector (Ic) (Max)1 A
Current - Collector Cutoff (Max)1 µA
DC Current Gain (hFE) (Min)160
Frequency - Transition100 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseFormed Leads, TO-226-3, TO-92-3 Long Body
Package NameTO-92-3
Power - Max900 mW
Transistor TypeNPN
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)160 V

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CAD

3D models and CAD resources for this part