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STU6N65M2 - I-Pak

STU6N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE

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DocumentsTN1224+24
STU6N65M2 - I-Pak

STU6N65M2

Active
STMicroelectronics

N-CHANNEL 650 V, 1.2 OHM TYP., 4 A MDMESH M2 POWER MOSFET IN IPAK PACKAGE

Deep-Dive with AI

DocumentsTN1224+24

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationSTU6N65M2STU6N65 Series
Current - Continuous Drain (Id) @ 25°C4 A4 - 5.4 A
Drain to Source Voltage (Vdss)650 V650 V
Drive Voltage (Max Rds On, Min Rds On)10 V10 V
FET TypeN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs9.8 nC9.8 nC
Input Capacitance (Ciss) (Max) @ Vds226 pF226 - 880 pF
Mounting TypeThrough HoleThrough Hole
Operating Temperature-150 °C
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-55 °C-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AAIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)60 W60 W
Power Dissipation (Max)-110 W
Rds On (Max) @ Id, Vgs-1.3 Ohm
Rds On (Max) @ Id, Vgs [Max]1.35 Ohm1.35 Ohm
Supplier Device PackageTO-251 (IPAK)TO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)25 V25 - 30 V
Vgs(th) (Max) @ Id4 V4 - 4.5 V

STU6N65 Series

N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package

PartTechnologyPackage / CaseDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CInput Capacitance (Ciss) (Max) @ VdsMounting TypeFET TypeDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Rds On (Max) @ Id, Vgs [Max]Operating Temperature [Min]Operating Temperature [Max]Vgs(th) (Max) @ IdPower Dissipation (Max)Gate Charge (Qg) (Max) @ VgsSupplier Device PackageRds On (Max) @ Id, VgsOperating TemperaturePower Dissipation (Max) [Max]
STMicroelectronics
STU6N65M2
MOSFET (Metal Oxide)
IPAK, TO-251-3 Short Leads, TO-251AA
650 V
4 A
226 pF
Through Hole
N-Channel
10 V
25 V
1.35 Ohm
-55 °C
150 °C
4 V
60 W
9.8 nC
TO-251 (IPAK)
STMicroelectronics
STU6N65K3
MOSFET (Metal Oxide)
IPAK, TO-251-3 Short Leads, TO-251AA
650 V
5.4 A
880 pF
Through Hole
N-Channel
10 V
30 V
4.5 V
TO-251 (IPAK)
1.3 Ohm
150 °C
110 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 75$ 0.85
150$ 0.67
375$ 0.67
525$ 0.57
1875$ 0.46
3750$ 0.44
7500$ 0.42

Description

General part information

STU6N65 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.