2SD1691-AZ

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Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

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Documents2SD1691 Data Sheet

2SD1691-AZ

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Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR NPN

Deep-Dive with AI

Documents2SD1691 Data Sheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1691-AZ

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max	1.3 W
Supplier Device Package	TO-126
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

2SD1691 Series

Bipolar Power Transistors

Part	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max)	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Supplier Device Package
Renesas Electronics Corporation 2SD1691-AZ	1.3 W	100	5 A	NPN	TO-126-3, TO-225AA	10 µA	150 °C	300 mV	60 V	Through Hole	TO-126

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	492	$ 0.61

Description

General part information

2SD1691 Series

A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.

Documents

Technical documentation and resources

2SD1691 Data Sheet

Datasheet