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1N5821

1N5821

Obsolete
ON Semiconductor

SCHOTTKY BARRIER RECTIFIER, 3.0 A, 30 V

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1N5821

1N5821

Obsolete
ON Semiconductor

SCHOTTKY BARRIER RECTIFIER, 3.0 A, 30 V

Find alt

Description

General part information

1N5821

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.

Technical Specifications

Parameters and characteristics for this part

Specification1N5821
Capacitance190 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage500 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)125 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseDO-201AD, Axial
Package NameDO-201AD
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologySchottky
Voltage - DC Reverse (Vr) (Max)30 V
Voltage - Forward (Vf) (Max)500 mV

Pricing

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CAD

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Documents

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