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TC4424EOE713 - SOIC / 16

TC4424EOE713

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Microchip Technology

MOSFET DRVR 3A 2-OUT LO SIDE NON-INV 16-PIN SOIC W T/R

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TC4424EOE713 - SOIC / 16

TC4424EOE713

Active
Microchip Technology

MOSFET DRVR 3A 2-OUT LO SIDE NON-INV 16-PIN SOIC W T/R

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTC4424EOE713TC4424 Series
Channel Type-Independent
Current - Peak Output (Source, Sink)-3 - 4.5 A
Current - Peak Output (Source, Sink)-3 - 4.5 A
Driven Configuration-Low-Side
Gate Type-N-Channel, P-Channel MOSFET, P-Channel
Grade-Automotive
Input Type-Non-Inverting
Mounting Type-Surface Mount, Through Hole
null-
Number of Drivers-2
Operating Temperature-125 - 150 °C
Operating Temperature--40 - 0 °C
Package / Case-8-VDFN Exposed Pad, 8-DIP, 16-SOIC, 8-SOIC
Package / Case-0.3 in
Package / Case-7.62 mm
Package / Case-0.154 - 0.295 in
Package / Case-3.9 - 7.5 mm
Qualification-AEC-Q100
Rise / Fall Time (Typ)-25 ns
Rise / Fall Time (Typ)-23 ns
Rise / Fall Time (Typ)-12 ns
Rise / Fall Time (Typ)-12 ns
Supplier Device Package-8-DFN-S (6x5), 8-PDIP, 16-SOIC, 8-SOIC
Voltage - Supply-18 V
Voltage - Supply-4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectT/R 1$ 3.03
25$ 2.52
100$ 2.30
1000$ 1.91
5000$ 1.77
10000$ 1.64

TC4424 Series

Dual 3 A MOSFET Gate Driver

PartSupplier Device PackageChannel TypeNumber of DriversRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Package / CaseOperating Temperature [Max]Operating Temperature [Min]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Voltage - Supply [Max]Voltage - Supply [Min]Mounting TypeInput TypeGate TypeDriven ConfigurationPackage / CasePackage / CasePackage / Case [x]Package / Case [y]Rise / Fall Time (Typ)Rise / Fall Time (Typ)QualificationGrade
Microchip Technology
TC4424VMF713
8-DFN-S (6x5)
Independent
2
25 ns
23 ns
8-VDFN Exposed Pad
150 °C
-40 °C
3 A
3 A
18 V
4.5 V
Surface Mount
Non-Inverting
N-Channel, P-Channel MOSFET
Low-Side
Microchip Technology
TC4424CPA
Microchip Technology
TC4424EMF713
Microchip Technology
TC4424MJA
Microchip Technology
TC4424EPA
8-PDIP
Independent
2
25 ns
23 ns
8-DIP
150 °C
-40 °C
3 A
3 A
18 V
4.5 V
Through Hole
Non-Inverting
N-Channel, P-Channel MOSFET
Low-Side
0.3 in
7.62 mm
Microchip Technology
TC4424COE713
Microchip Technology
TC4424VOE713
16-SOIC
Independent
2
25 ns
23 ns
16-SOIC
150 °C
-40 °C
3 A
3 A
18 V
4.5 V
Surface Mount
Non-Inverting
N-Channel, P-Channel MOSFET
Low-Side
0.295 in
7.5 mm
Microchip Technology
TC4424AVOA713
8-SOIC
Independent
2
8-SOIC
150 °C
-40 °C
4.5 A
4.5 A
18 V
4.5 V
Surface Mount
Non-Inverting
N-Channel, P-Channel MOSFET
Low-Side
0.154 in
3.9 mm
12 ns
12 ns
Microchip Technology
TC4424CPA
Microchip Technology
TC4424EOE713

Description

General part information

TC4424 Series

The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/gate drivers, which, in turn, are improved versions of the earlier TC426/427/428 series. All three families are pin-compatible. The TC4423/4424/4425 drivers are capable of giving reliable service in far more demanding electrical environments than their antecedents. Although primarily intended for driving power MOSFETs, the TC4423/4424/4425 gate drivers are equally well-suited to driving any other load (capacitive, resistive, or inductive) which requires a low impedance driver capable of high peak currents and fast switching times. For example, heavily loaded clock lines, coaxial cables, or piezoelectric transducers can all be driven from the TC4423/4424/4425. The only known limitation on loading is the total power dissipated in the driver must be kept within the maximum power dissipation limits of the package.