Zenode.ai Logo
DMN3009SFGQ-13

DMN3009SFGQ-13

Active
Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt
DMN3009SFGQ-13

DMN3009SFGQ-13

Active
Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMN3009SFGQ-13

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3009SFGQ-13
Current - Continuous Drain (Id) (Ta)16 A
Current - Continuous Drain (Id) (Tc)45 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)42 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package NamePOWERDI3333-8
Power Dissipation (Max)900 mW
QualificationAEC-Q101
Rds On (Max)5.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part