IRFHM8363TRPBF

Infineon Technologies

N+N DUAL SMALL SIGNAL MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 14.9 MOHM;

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Infineon Technologies

N+N DUAL SMALL SIGNAL MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 14.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFHM8363TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1165 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	2.7 W
Rds On (Max) @ Id, Vgs	14.9 mOhm
Supplier Device Package	8-PQFN, Power33
Supplier Device Package [x]	3.3 mm
Supplier Device Package [y]	3.3 mm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.35 V

Part	Mounting Type	Configuration	Supplier Device Package	Supplier Device Package [x]	Supplier Device Package [y]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Feature	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id
Infineon Technologies IRFHM8363TRPBF	Surface Mount	2 N-Channel (Dual)	8-PQFN Power33	3.3 mm	3.3 mm	15 nC	1165 pF	14.9 mOhm	Logic Level Gate	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	2.7 W	11 A	8-PowerVDFN	2.35 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 11A 2.7W Surface Mount 8-PQFN (3.3x3.3), Power33

Technical documentation and resources