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1SS387,L3F - SC-79, SOD-523

1SS387,L3F

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Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA ESC

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1SS387,L3F - SC-79, SOD-523

1SS387,L3F

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA ESC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1SS387,L3F
Capacitance @ Vr, F0.5 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage @ Vr500 nA
Mounting TypeSurface Mount
Operating Temperature - Junction125 °C
Package / CaseSC-79, SOD-523
Reverse Recovery Time (trr)4 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageESC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.20
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
2000$ 0.04
Digi-Reel® 1$ 0.20
10$ 0.12
100$ 0.07
500$ 0.05
1000$ 0.05
2000$ 0.04
Tape & Reel (TR) 8000$ 0.03
16000$ 0.03
24000$ 0.03
40000$ 0.03
56000$ 0.03
80000$ 0.02
200000$ 0.02
400000$ 0.02

Description

General part information

1SS387,L3F

Diode 80 V 100mA Surface Mount ESC

Documents

Technical documentation and resources